Molecular dynamics simulations of Si etching by energetic CF3

摘要: The development of a Tersoff-type empirical interatomic potential energy function (PEF) for the Si–C–F system is reported. As first application this potential, etching a:Si by CF3+ using molecular dynamics (MD) simulations demonstrated. Aspects ion bombardment through fluence 4×1016 cm−2 are discussed, including overlayer composition and thickness, Si etch yields, product distributions. formation 1-nm-thick steady-state SixCyFz occurs in simulation, layer an active participant underlying Si. At 100 eV, steady state yield predicted to be 0.06±0.01 Si/ion. A comparison simulation findings experimental results from literature leads conclusion that new PEF performs well qualitatively modeling atomic-scale processes involved beam Simulations kind insight into fluorocarbon mechanisms, ultimately will resu...