Improvement of Metal–Insulator–Semiconductor-Type Organic Light-Emitting Transistors
作者： Kenji Nakamura , Takuya Hata , Atsushi Yoshizawa , Katsunari Obata , Hiroyuki Endo
DOI: 10.1143/JJAP.47.1889
关键词:
摘要: We developed metal–insulator–semiconductor-type organic light-emitting transistors (MIS-OLETs), and improved their properties by optimizing the device structure. MIS-OLETs showed a maximum drain current of ID = -149 µA, luminance 1034 cd/m2 (VD -20 V, VG -50 V) on/off ratio over 104. Moreover an active-matrix display using on plastic substrate was fabricated. The 16×16 active-matrix-drive (AMOLET) excellent
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