Characteristics of silicon nano wire as piezoresistor for nano electro mechanical systems
作者： T. Toriyama , Y. Tanimoto , S. Sugiyama
DOI: 10.1109/MEMSYS.2001.906539
关键词:
摘要: In order to confirm ability of silicon nano wire piezoresistors as sensing element mechanical sensors, current-voltage (I-V) characteristics and the piezoresistive effect were investigated. Electron beam (EB) direct writing RIE used for fabrication. Fabricated polycrystalline Si (poly-Si) have triangular or trapezoid cross sections. The minimum width is 53 nm thickness 32 nm. A remarkable phenomenon was observed. longitudinal coefficient /spl pi//sub l/ piezoresistor increased with a decrease in section area, while transverse t/ approximately zero invariant despite variation area. maximum value 22/spl times/10/sup -5/ (1/MPa) at impurity concentration N=5/spl 19/ (cm/sup -3/).
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