Characteristics of Neutron Damage in Silicon

摘要: The production and annealing behavior of the divacancy $A$ center in fission-neutron-irradiated silicon was studied by infrared absorption, using 1.8-, 3.9-, 12-\ensuremath{\mu} bands. rate found to be high, about 5.7 ${\mathrm{cm}}^{\ensuremath{-}1}$, enhanced presence boron (\ensuremath{\sim}2\ifmmode\times\else\texttimes\fi{}${10}^{17}$ atoms per ${\mathrm{cm}}^{3}$), but not oxygen (\ensuremath{\sim}1\ifmmode\times\else\texttimes\fi{}${10}^{18}$ ${\mathrm{cm}}^{3}$). divacancies neutron-irradiated Si required an activation energy 1.25 eV, as electron-irradiated Si, indicating that most were removed diffusion sinks. results also indicate local defect concentrations damaged regions can high \ensuremath{\sim}${10}^{20}$ defects ${\mathrm{cm}}^{\ensuremath{-}3}$, which still retain their individual properties far absorption are concerned. extremely low. near-edge band studied. About 95% disappeared upon same broad temperature range did divacancies. From these results, it concluded majority total volume localized damage produced fission-neutron irradiation is rich crystalline.