Temperature-dependent magnetic susceptibility of narrow band-gap semiconductors

摘要: The authors derive a theory of temperature-dependent magnetic susceptibility narrow band-gap semiconductors from the general expression Bloch electrons which includes spin-orbit and many-body effects first principles. They use k. pi formalism to calculate momentum matrix elements energy gaps. effect temperature has been incorporated in authors' through change gap Fermi distribution function. As an example, they have applied their carriers ( chi c) p-PbTe. It is found that as increased, c decreases becomes negative. anomalous behaviour shown be due mainly strong contribution susceptibility.