Stress changes in chemical vapor deposition tungsten silicide (polycide) film measured by x-ray diffraction
作者： Joshua Pelleg , E. Elish
DOI: 10.1116/1.1467663
关键词:
摘要: … Annealing at 1173 K for 30 min was sufficient to crystallize tungsten silicide … in tungsten silicide film at every step of the polycide process sequence. Structural parameters of tungsten …
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