Crystallization and resistivity of amorphous titanium silicide films deposited by coevaporation
作者： M. J. H. Kemper , P. H. Oosting
DOI: 10.1063/1.331535
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摘要: Films of titanium silicide were deposited on oxidized silicon wafers by means the coevaporation and silicon. The atomic concentration range 0?Si/Ti?4 was studied. films annealed in hydrogen ambient temperature 300–1000 °C. For Si/Ti≊2, annealing between 800 900 °C results formation TiSi2 with a resistivity as low 15–25 μΩcm grain size 200–500 A. In situ transmission electron microscope differential thermal analysis show that crystallization starts at 350 °C. properties as‐deposited amorphous (Ti+Si) found to be consistent theories for disordered metal‐metal alloys. behavior (a coefficient, which is independent composition) can described terms Mooij’s rule. 350 °C agreement model proposed Buschow.
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