作者: R. Platz , S. Wagner , C. Hof , A. Shah , S. Wieder
DOI: 10.1063/1.368592
关键词:
摘要: The first comparative study of dc, rf, and very high frequency (VHF) excitation for the plasma enhanced chemical vapor deposition intrinsic layers hydrogenated amorphous silicon (a-Si:H) is presented. effects hydrogen dilution on film stability are emphasized. Growth rates at comparable power presented substrate temperatures between 100 300 °C various H2 ratios. optical band gap, H content, electronic transport properties in light-soaked state were measured. strongly reduces growth rate all techniques. highest ratio higher VHF (∼4 A/s) than dc (∼3 or rf (0.5–1 excitation. In three cases, increasing temperature gap content CH. Raising slightly enhances stability. increases rf- VHF-deposited samples with ...