INFLUENCE OF EXCITATION FREQUENCY, TEMPERATURE, AND HYDROGEN DILUTION ON THE STABILITY OF PLASMA ENHANCED CHEMICAL VAPOR DEPOSITED A-SI:H

作者: R. Platz , S. Wagner , C. Hof , A. Shah , S. Wieder

DOI: 10.1063/1.368592

关键词:

摘要: The first comparative study of dc, rf, and very high frequency (VHF) excitation for the plasma enhanced chemical vapor deposition intrinsic layers hydrogenated amorphous silicon (a-Si:H) is presented. effects hydrogen dilution on film stability are emphasized. Growth rates at comparable power presented substrate temperatures between 100 300 °C various H2 ratios. optical band gap, H content, electronic transport properties in light-soaked state were measured. strongly reduces growth rate all techniques. highest ratio higher VHF (∼4 A/s) than dc (∼3 or rf (0.5–1 excitation. In three cases, increasing temperature gap content CH. Raising slightly enhances stability. increases rf- VHF-deposited samples with ...

参考文章(18)
N. Beck, N. Wyrsch, Ch. Hof, A. Shah, MOBILITY LIFETIME PRODUCT : A TOOL FOR CORRELATING A-SI:H FILM PROPERTIES AND SOLAR CELL PERFORMANCES Journal of Applied Physics. ,vol. 79, pp. 9361- 9368 ,(1996) , 10.1063/1.362614
S. Guha, K. L. Narasimhan, S. M. Pietruszko, On light‐induced effect in amorphous hydrogenated silicon Journal of Applied Physics. ,vol. 52, pp. 859- 860 ,(1981) , 10.1063/1.328849
G. D. Cody, T. Tiedje, B. Abeles, B. Brooks, Y. Goldstein, Disorder and the Optical-Absorption Edge of Hydrogenated Amorphous Silicon Physical Review Letters. ,vol. 47, pp. 1480- 1483 ,(1981) , 10.1103/PHYSREVLETT.47.1480
Rainer Platz, J. Meier, D. Fischer, S. Dubail, A. Shah, The Problem of the Top Cell for the Micromorph Tandem MRS Proceedings. ,vol. 467, pp. 699- 704 ,(1997) , 10.1557/PROC-467-699
R. Platz, D. Fischer, S. Dubail, A. Shah, a-Si:H/a-Si:H stacked cell from VHF-deposition in a single chamber reactor with 9% stabilized efficiency Solar Energy Materials and Solar Cells. ,vol. 46, pp. 157- 172 ,(1997) , 10.1016/S0927-0248(97)00008-1
J. Todd Stephen, Daxing Han, A. Harv Mahan, Yue Wu, Hydrogen distribution in high stability a-Si:H prepared by the hot wire technique MRS Proceedings. ,vol. 420, pp. 485- 490 ,(1996) , 10.1557/PROC-420-485
N. Maley, J. S. Lannin, Influence of hydrogen on vibrational and optical properties of a - Si 1 − x H x alloys Physical Review B. ,vol. 36, pp. 1146- 1152 ,(1987) , 10.1103/PHYSREVB.36.1146
Ch Hof, Y Ziegler, R Platz, N Wyrsch, A Shah, Stability of a-Si:H prepared by hot-wire and glow discharge using H2 dilution evaluated by pulsed laser degradation Journal of Non-crystalline Solids. ,vol. 227, pp. 287- 291 ,(1998) , 10.1016/S0022-3093(98)00066-0
Y. S. Tsuo, E. B. Smith, S. K. Deb, Ion beam hydrogenation of amorphous silicon Applied Physics Letters. ,vol. 51, pp. 1436- 1438 ,(1987) , 10.1063/1.98649