Electronic states of simple-transition-metal impurities in silicon
作者： L. A. Hemstreet
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摘要: The $X\ensuremath{\alpha}$ scattered-wave cluster method has been used to investigate the electronic properties associated with simple substitutional transition-metal impurities in silicon. studied were chosen from $3d$ row of periodic table and include chromium, cobalt, nickel, copper, zinc. In all cases defect behavior (donor or acceptor) correctly determined, calculated position corresponding level gap found be good agreement measured values except that cobalt. Trends transition metal defects are discussed correlated local bonding host-defect system.
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