Charge transfer to oxygen chemisorbed on cleaved GaAs(110) surfaces

摘要: The change of the work function cleaved GaAs(110) surfaces due to chemisorption oxygen was measured at room temperature by using Kelvin method. With increasing exposure contact potential first increases and then decreases. Using dependence band bending on doses as determined Spicer coworkers ionization energy calculated. experimental data show that linearly ?0.4 eV up a coverage ϑ?0.6 decreases; i.e., chemisorbed oxgen is charged negatively. initial slope ΔI‐vs‐ϑ curve amounts 0.65 per monolayer gives μn/es=0.04 eo A. This result explained in simple model localized bonds between surface arsenic results charge transfer approximately –0.28 oxygen.