Energetics of porous amorphous low-k SiOCH dielectric films

摘要: Abstract The trend toward dimension reduction in electronic devices has driven the research and development of low dielectric constant materials to solve resistance capacitance delays power consumption issues. Amorphous porous hydrogenated silicon oxycarbides form a class that have even lower constants than other oxycarbides, achieved by introducing organic functional groups as well porosity alter structure decrease density conventional silica. However, these films tend decompose SiO2 during thermal annealing nano-electronic fabrication processes. This apparent instability leads need investigate how can change fundamental thermodynamic stability this materials. We used high temperature oxidative molten salt solution calorimetry cryogenic heat capacity measurements directly determine enthalpies formation, capacities, standard entropies series well-characterized SiOCH films. Thus, full dataset been obtained for low-k All samples are either found be unstable or metastable at below 298.15 K with respect their crystalline counterparts gaseous products. there appears little chance forming thermodynamically stable amorphous persistence use is controlled kinetic rather factors.