摘要: It is widely believed that the continuous random network (CRN) model represents structural topology of amorphous silicon. The key evidence can reproduce well experimental reduced density functions (RDFs) obtained by diffraction. By using a combination electron diffraction and fluctuation microscopy (FEM) variance data as constraints in relaxation procedure, we show CRN not unique matching RDF. We find inhomogeneous paracrystalline structures containing local cubic ordering at 10 to 20 angstrom length scale are also fully consistent with RDF data. Crucially, they matched FEM data, unlike model. has implications for understanding phase transformation processes various materials extend beyond
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