Resistance fluctuations in narrow AlGaAs/GaAs heterostructures: Direct evidence of fractional charge in the fractional quantum hall effect.

作者: J. A. Simmons , H. P. Wei , L. W. Engel , D. C. Tsui , M. Shayegan

DOI: 10.1103/PHYSREVLETT.63.1731

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摘要: In \ensuremath{\sim}2-\ensuremath{\mu}m-wide Hall bars of high-mobility GaAs/AlGaAs heterostructure resistance fluctuations quasiperiod \ensuremath{\Delta}B\ensuremath{\simeq}0.016 T are observed near the diagonal minima for Landau-level filling factors \ensuremath{\nu}=1,2,3,4. This behavior is consistent with resonant reflection through magnetically bound states as a mechanism breakdown dissipationless transport in narrow channels. \ensuremath{\nu}=(1/3 minimum fractional quantum effect we observe similar fluctuation structure, but period \ensuremath{\sim}0.05 T\ensuremath{\simeq}3\ensuremath{\Delta}B, indicative by quasiparticles charge e/3.

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