The effect of doping Sb on the electronic structure and the device characteristics of Ovonic Threshold Switches based on Ge-Se
作者： Sang-Yeol Shin , J. M. Choi , Juhee Seo , Hyung-Woo Ahn , Yong Gyu Choi
DOI: 10.1038/SREP07099
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摘要: The Ovonic Threshold Switch (OTS) based on an amorphous chalcogenide material has attracted much interest as a promising candidate for high-performance thin-film switching device enabling 3D-stacking of memory devices. In this work, we studied the electronic structure Sb-doped Ge0.6Se0.4 (in atomic mole fraction) film and its characteristics to OTS From optical absorption spectroscopy measurement, band gap (Eg) was found decrease with increasing Sb content. addition, content increased, activation energy (Ea) electrical conduction down about one third Eg from half. As characteristics, that threshold voltage (Vth) drastically decreased These results, being accountable in terms changes bonding configuration constituent atoms well such trap states, advance effective method compositional adjustment modulate Vth various applications.
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