One-time programmable devices using gate-all-around structures
作者： Chung Shine C
DOI:
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摘要: An One-Time Programmable (OTP) memory is built in at least one of nano-wire structures. The OTP has a plurality cells. At the cells can have resistive element and nano-wires. be by an extended source/drain or MOS gate. nano-wires on common well isolated structure that gate dividing into first active region second region.
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