Demonstration, radiation tolerance and design on a betavoltaic micropower

摘要: Abstract The limitation of conventional silicon P + /I(N − )/N junction device coupled with 63 Ni radioactive source as a betavoltaic micropower is further investigated both theoretically and experimentally. radiation tolerance the devices irradiated by 2.2 mCi fluence up to 1.5 × 10 15  cm −2 demonstrated I – V , C measurements electrical output under irradiation an 8 mCi measured calculated. An approach performed which describes β-particles energy deposition distribution within results illustrate significant influence on conversion efficiency due incompatibility relied structure configuration. test result also compared experimental data Wisconsin University major factors causing low transfer are analyzed. Some means such multi-hole Si/SiC heterojunction structure, cylindrical volumetric source, narrowed depletion region width keeping leakage current order magnitude picoampere adopted ultimately parameters hole diameter, thickness, determined discussed, in absorb effectively number energetic particles limit degradation at same time thus enhance efficiency.