Direct imaging of p-n junction in core-shell GaN wires.
作者： P. Tchoulfian , F. Donatini , F. Levy , A. Dussaigne , P. Ferret
DOI: 10.1021/NL5010493
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摘要: While core–shell wire-based devices offer a promising path toward improved optoelectronic applications, their development is hampered by the present uncertainty about essential semiconductor properties along three-dimensional (3D) buried p–n junction. Thanks to cross-sectional approach, scanning electron beam probing techniques were employed here obtain nanoscale spatially resolved analysis of GaN wire junctions grown catalyst-free metal–organic vapor phase epitaxy on and Si substrates. Both induced current (EBIC) secondary voltage constrast (VC) demonstrated delineate radial axial junction existing in 3D structure. The Mg dopant activation process p-GaN shell was dynamically controlled ebeam exposure conditions visualized thanks EBIC mapping. measurements shown yield local minority carrier/exciton diffusion lengths p-side (∼57 nm) n-side (∼15 as well depletion width r...
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