High temperature electrical properties of highly epitaxial CaCu3Ti4O12 thin films on (001) LaAlO3
作者： L. Chen , C. L. Chen , Y. Lin , Y. B. Chen , X. H. Chen
DOI: 10.1063/1.1565702
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摘要: The high temperature electrical behavior of highly epitaxial CaCu3Ti4O12 thin films on (001) LaAlO3 have been systematically investigated with traditional four-probe dc and ac resistance measurement techniques two-probe impedance spectroscopy. Both measurements reveal that the Arrhenius plot, ln(σ) vs (1/T), forms two linear sections a transition between them at 773 K, one activation energy Ea ∼1.3 eV low temperature, other Eb ∼0.5 eV temperatures. spectra also confirm these phenomena suggest unlike in polycrystalline bulk material, frequency response is predominantly from grains rather than grain boundaries.
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