作者: Zhenyu Song , Qiang Fu , Lei Li , LI Li , Y. An
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摘要: Ti-doped In2O3 thin films have been prepared on glass substrate by radio frequency (RF) sputtering with different powers (90, 120, 150, and 180 W) at 330 °C. The influence of power the structural, electrical optical properties deposited is investigated. average transmittance in wavelength range 500–1100 nm over 90%. Low resistivity 7.3×10–4 Ωcm also obtained based our films, suggesting that a good candidate for transparent conductive film.