Charge deep-level transient spectroscopy of SiO2 and Al2O3 layers with embedded Ge nanocrystals
作者： I. V. Antonova , V. I. Popov , S. A. Smagulova , J. Jedrzejewski , I. Balberg
DOI: 10.1063/1.4793586
关键词:
摘要: The present study of deep level transient spectroscopy (DLTS) is focused on a comparison the trap states in two types Ge nanocrystallites (NCs)-insulator composites. investigated systems were dielectric matrices Al2O3 and SiO2 which NCs embedded. We have found couples traps with related values activation energies both Ge:Al2O3 Ge:SiO2 films. In films relatively low content (where only small sized 3–5 nm could been detected by means Raman spectroscopy), we observed an energy ∼50 meV 120 50 meV systems, that electron carrier capture cross-section (10−21–10−23 cm2). identified levels to be quantum confinement NCs. For samples higher contents, where NC size reaches about 20 nm appreciable portion matrix consists amorphous (α-Ge), ...
scitation.org
harvard.edu
aip.org 
sci-hub.se 参考文章(22)
J. R. Weber, A. Janotti, C. G. Van de Walle, Native defects in Al2O3 and their impact on III-V/Al2O3 metal-oxide-semiconductor-based devices Journal of Applied Physics. ,vol. 109, pp. 033715- ,(2011) , 10.1063/1.3544310
XL Wu, T Gao, XM Bao, F Yan, SS Jiang, D Feng, None, Annealing temperature dependence of Raman scattering in Ge+-implanted SiO2 films Journal of Applied Physics. ,vol. 82, pp. 2704- 2706 ,(1997) , 10.1063/1.366089
Chang-Hyun Lee, Sung-Hoi Hur, You-Cheol Shin, Jeong-Hyuk Choi, Dong-Gun Park, Kinam Kim, Charge-trapping device structure of SiO2∕SiN∕high-k dielectric Al2O3 for high-density flash memory Applied Physics Letters. ,vol. 86, pp. 152908- ,(2005) , 10.1063/1.1897431
Irina V. Antonova, Vladimir A. Volodin, Efim P. Neustroev, Svetlana A. Smagulova, Jedrzej Jedrzejewsi, Isaac Balberg, Charge spectroscopy of Si nanocrystallites embedded in a SiO2 matrix Journal of Applied Physics. ,vol. 106, pp. 064306- ,(2009) , 10.1063/1.3224865
D. A. Mehta, S. R. Butler, F. J. Feigl, Electronic charge trapping in chemical vapor‐deposited thin films of Al2O3 on silicon Journal of Applied Physics. ,vol. 43, pp. 4631- 4638 ,(1972) , 10.1063/1.1660979
Victor I. Klimov, Sergei A. Ivanov, Jagjit Nanda, Marc Achermann, Ilya Bezel, John A. McGuire, Andrei Piryatinski, Single-exciton optical gain in semiconductor nanocrystals Nature. ,vol. 447, pp. 441- 446 ,(2007) , 10.1038/NATURE05839
Xin Zhou, Ken Uchida, Shunri Oda, Current fluctuations in three-dimensionally stacked Si nanocrystals thin films Applied Physics Letters. ,vol. 96, pp. 092112- ,(2010) , 10.1063/1.3294329
Mohammed B. Zahid, Daniel Ruiz Aguado, R. Degraeve, W. C. Wang, Bogdan Govoreanu, María Toledano-Luque, V. V. Afanasev, Jan Van Houdt, Applying Complementary Trap Characterization Technique to Crystalline $\gamma$ -Phase- $\hbox{Al}_{2} \hbox{O}_{3}$ for Improved Understanding of Nonvolatile Memory Operation and Reliability IEEE Transactions on Electron Devices. ,vol. 57, pp. 2907- 2916 ,(2010) , 10.1109/TED.2010.2071071
I. V. Antonova, O. V. Naumova, V. P. Popov, J. Stano, V. A. Skuratov, Modification of the bonded interface in silicon-on-insulator structures under thermal treatment in hydrogen ambient Journal of Applied Physics. ,vol. 93, pp. 426- 431 ,(2003) , 10.1063/1.1527991
P K Giri, S Bhattacharyya, Kaustuv Das, S K Roy, R Kesavamoorthy, B K Panigrahi, K G M Nair, A comparative study of the vibrational and luminescence properties of embedded Ge nanocrystals prepared by ion implantation and sputter deposition methods: role of strain and defects Semiconductor Science and Technology. ,vol. 22, pp. 1332- 1338 ,(2007) , 10.1088/0268-1242/22/12/017