Positron trapping at divacancies in thin polycrystalline CdTe films deposited on glass

摘要: We have performed positron annihilation experiments on CdTe films grown by vacuum evaporation at 220 °C both plain glass and indium‐tin‐oxide‐coated substrates. By checking the linearity of valence parameter S versus core W we introduce a method to analyze data which directly shows that same vacancy defect can be present in all films. comparing VCd identify this as divacancy VCd‐VTe. Its concentration decreases from about 1018 less than 1016 cm−3 after annealing air 400 °C for 30 min. Chlorine doping seems stabilize divacancies.