Characterization of monolithic n-type 6H-SiC piezoresistive sensing elements
作者： J.S. Shor , L. Bemis , A.D. Kurtz
DOI: 10.1109/16.285013
关键词:
摘要: Monolithic, junction isolated piezoresistors have been fabricated in commercially available 6H-SiC. The gauge factor (GF) of these elements has measured up to 250/spl deg/C both longitudinal and transverse configurations. maximum GF observed was -29.3, corresponding the piezoresistive coefficient /spl pi//sub 11/. A beam transducer with a four-arm integral piezoresistor network tested force sensor configuration. data indicate that, n-type 6H-SiC potential be useful high temperature electromechanical sensors measure parameters such as pressure, force, strain acceleration. >
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