作者: P.A. Dowben , J.T. Spencer , G.T. Stauf
DOI: 10.1016/0921-5107(89)90007-X
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摘要: Abstract The deposition of metal silicide thin films can be undertaken using volatile organometallic complexes. Organometallic vapor phase epitaxy or metal-organic chemical has a number potential advantages over conventional and molecular beam technologies, novel film materials may made from compounds. Plasma-, pyrolytic- photolytic- assisted decomposition complexes have been in an effort to make variety metallic films. These efforts are comprehensively reviewed.