Light-emitting diodes by bandstructure engineering in van der Waals heterostructures
作者： F. Withers , O. Del Pozo-Zamudio , A. Mishchenko , A. P. Rooney , A. Gholinia
DOI: 10.1038/NMAT4205
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摘要: The advent of graphene and related 2D materials, has recently led to a new technology: heterostructures based on these atomically thin crystals. The paradigm proved itself extremely versatile and led to rapid demonstration of tunnelling diodes with negative differential resistance, tunnelling transistors, photovoltaic devices, and so on. Here, we take the complexity and functionality of such van der Waals heterostructures to the next level by introducing quantum wells (QWs) engineered with one atomic plane precision. We describe …
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