Spin splitting of single 0D impurity states in semiconductor heterostructure Quantum Wells.

摘要: Zeeman splitting of the ground state single impurities in quantum well a resonant tunneling heterostructure is reported. We determine absolute magnitude effective magnetic spin factor g p for impurity 44 AA l 0.27Ga0.73AsyGaAsyAl0.27Ga0.73As to be 0.28 6 0.02. This system also allows independent measurement electron rates through two potential barriers and estimation occupation probability well. The experimental realization granular electronic systems, such as low dimensional semiconductor ultrasmall metallic has focused attention on basic physical properties discrete systems. Especially intriguing are dot [1 ‐ 5] physically similar localized systems [6 ‐10]. latter provides unique laboratory study impurity. present here first observation impurity, studied by transport. measured an important test band theory confined our method particularly widths less than 50 A where other methods precise [11‐ 13]. Isolated donor regions large area structures form (,100 A) hydrogenic states bound eigenstates. Figure 1 illustrates diagram structure used this with one schematically noted. In applied bias when aligns emitter Fermi level, current exhibits steplike increase. general, there may multiple giving rise multiple, overlapping steps current-voltage [IsV d] characteristics. An appropriately dilute, unintentional doping concentration gives isolated, uncorrelated impurities, allowing one. field degeneracy broken, resulting step IsV d can determined from voltage difference between fragments spin-split step. magnitudes enable us, time, independently sequential picture [4,14].