作者: Ting Su , Haifeng Zhang
DOI: 10.1371/JOURNAL.PONE.0171050
关键词:
摘要: Charge trapping properties of electrons and holes in copper-doped zinc oxide (ZnO:Cu) films have been studied by scanning probe microscopy. We investigated the surface potential dependence on voltage duration applied to ZnO Kelvin force It is found that Fermi Level 8 at.% Cu-doped shifted 0.53 eV comparing undoped films. This shift indicates significant change electronic structure energy balance The (work function) can be tuned Cu doping, which are important for developing this functional material. In addition, microscopy measurements demonstrate nature contact at Pt-coated tip/ZnO:Cu interface changed from Schottky Ohmic increasing sufficient amount ions. charge property enhance greatly doping (~10 at.%). improved stable bipolar indicate promising nonvolatile memory applications.