Metal nanojunctions on silicon single nanowire devices
作者： Giovanni Pennelli , Massimo Piotto
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摘要: Direct patterning of silicon dioxide by electron beam lithography is used for the definition metal nanojunction on wires fabricated insulator (SOI) substrates. Devices based a single nanowire as small 15 nm and several micrometers long are means top down process lithography, anisotropic etching thermal oxidation. A gate defined over nanoscale opening into surrounding wire obtained stimulated oxide etching. The behavior device like junction field effect transistor (SiNW-JFET) confirmed electrical characterization at room temperature.
参考文章(13)
G. Pennelli, M. Piotto, G. Barillaro, Silicon single-electron transistor fabricated by anisotropic etch and oxidation Microelectronic Engineering. ,vol. 83, pp. 1710- 1713 ,(2006) , 10.1016/J.MEE.2006.01.144
Ko Shing Chang, Chen Chia Chen, Jeng Tzong Sheu, Yaw-Kuan Li, Detection of an uncharged steroid with a silicon nanowire field-effect transistor Sensors and Actuators B-chemical. ,vol. 138, pp. 148- 153 ,(2009) , 10.1016/J.SNB.2009.02.059
Yi Cui, Qingqiao Wei, Hongkun Park, Charles M Lieber, Nanowire Nanosensors for Highly Sensitive and Selective Detection of Biological and Chemical Species Science. ,vol. 293, pp. 1289- 1292 ,(2001) , 10.1126/SCIENCE.1062711
Giovanni Pennelli, Massimo Piotto, Fabrication and characterization of silicon nanowires with triangular cross section Journal of Applied Physics. ,vol. 100, pp. 054507- ,(2006) , 10.1063/1.2338599
Toshiyuki Tsutsumi, Kenichi Ishii, Hiroshi Hiroshima, Sukti Hazra, Mitsuyuki Yamanaka, Isao Sakata, Hirohisa Taguchi, Eiichi Suzuki, Kazutaka Tomizawa, Fabrication technology of a Si nanowire memory transistor using an inorganic electron beam resist process Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. ,vol. 18, pp. 2640- 2645 ,(2000) , 10.1116/1.1314373
Giovanni Pennelli, Bruno Pellegrini, Fabrication of silicon nanostructures by geometry controlled oxidation Journal of Applied Physics. ,vol. 101, pp. 104502- ,(2007) , 10.1063/1.2722252
Eric Stern, James F. Klemic, David A. Routenberg, Pauline N. Wyrembak, Daniel B. Turner-Evans, Andrew D. Hamilton, David A. LaVan, Tarek M. Fahmy, Mark A. Reed, Label-free immunodetection with CMOS-compatible semiconducting nanowires Nature. ,vol. 445, pp. 519- 522 ,(2007) , 10.1038/NATURE05498
Giovanni Pennelli, Fast, high bit number pattern generator for electron and ion beam lithographies Review of Scientific Instruments. ,vol. 79, pp. 033902- ,(2008) , 10.1063/1.2894213
Xuan Thang Vu, Jan Felix Eschermann, Regina Stockmann, Ranjita GhoshMoulick, Andreas Offenhäusser, Sven Ingebrandt, Top-down processed silicon nanowire transistor arrays for biosensing Physica Status Solidi (a). ,vol. 206, pp. 426- 434 ,(2009) , 10.1002/PSSA.200880475
Ajay Agarwal, I. K Lao, K. Buddharaju, N. Singh, N. Balasubramanian, D. L. Kwong, Silicon Nanowire Array Bio-Sensor using Top-Down CMOS Technology TRANSDUCERS 2007 - 2007 International Solid-State Sensors, Actuators and Microsystems Conference. pp. 1051- 1054 ,(2007) , 10.1109/SENSOR.2007.4300314