Electronic Instability in a Zero-Gap Semiconductor: The Charge-Density Wave in (TaSe 4 ) 2 I
作者： C Tournier-Colletta , L Moreschini , G Autes , S Moser , A Crepaldi
DOI: 10.1103/PHYSREVLETT.110.236401
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摘要: We report a comprehensive study of the paradigmatic quasi-1D compound (TaSe4)(2)I performed by means angle-resolved photoemission spectroscopy (ARPES) and first-principles electronic structure calculations. find it to be zero-gap semiconductor in nondistorted structure, with non-negligible interchain coupling. Theory experiment support Peierls-like scenario for charge-density wave formation below T-CDW = 263 K, where incommensurability is direct consequence finite The small polarons, strongly suggested ARPES data, explains puzzling semiconductor-to-semiconductor transition observed transport at T-CDW.
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