Quantum well thermoelectric component for use in a thermoelectric device
作者： Daniel Delprat , Christophe Figuet , Oleg Kononchuk
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摘要: A quantum well thermoelectric component for use in a device based on the effect, • comprising stack (1 ) of layers (3, 4) two materials respectively made basis silicon and silicon-germanium, first said materials, silicon, defining barrier semiconductor material second conducting material, having band gap higher than wherein is an alloy germanium at least lattice matching element, element(s) being present order to control parameter mismatch between layer (3) (4) material.
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