Study on the physical properties and structure of titanium antimony thin films for phase change memory application

摘要: The phase change behaviors of titanium antimony thin films were examined as a function Ti concentration by in situ electrical measurement. With the increment content, crystallization temperature enhanced, while conductivity reduced. sharp decline carrier density is responsible for drop before and after crystallization. amorphous polycrystalline state was confirmed means selected area electron diffraction. shift Raman modes associated with Sb upon transition observed. surface morphology fluctuation obtained from atomic force microscopy X-ray reflectivity. interfacial adhesion strength between silicon dioxide implemented Nano Indenter®. Based on Arrhenius plot Johnson–Mehl–Avrami model, kinetics including activation energy, mechanism Avrami coefficient investigated well. values indexes illustrate one-dimensional growth-dominated films.