作者: Wojciech Leon Spychalski , Marcin Pisarek , Robert Szoszkiewicz
关键词:
摘要: Because of profound applications MoS2 crystals in electronics, their microscale oxidation is the subject substantial interest. We report on single crystals, which were oxidized within a precision muffle furnace at series increasing temperatures up to 500 °C. Using electron dispersion X-ray spectroscopy (EDS) ambient conditions, we observed an increase oxide content with heating temperature and obtained apparent activation energy for process order 1 kcal/mol. This value least 8 times smaller than surface formation MoO3 according literature points rather physisorbed oxygen species. Our Auger (AES) results also pointed out toward oxygen, similarly as our further studies elevated relative humidity conditions. The Mo leftovers sample investigated using atomic force microscopy (AFM) showed dendritic structures. Surface...