PHOTOELECTRIC CONVERSION DEVICE

摘要: PROBLEM TO BE SOLVED: To enable photoelectric conversion devices to be increased and made uniform in efficiency by a method wherein an N-type semiconductor of cadmium sulfide specific composition is used. SOLUTION: Sulfur contained required regulated amount so as make mixed crystal layer whose formula represented CdTeSx or the like optimal thickness. An 2 CdSx, where x set satisfy formula, 0.90<=x<1.00, When P-type 3 formed, varied thickness depending on forming temperature time, for instance, telluride formed at 530 630 deg.C 1 10 minutes. By this setup, device high can obtained.