Atomically thin p–n junctions with van der Waals heterointerfaces

摘要: Semiconductor p–n junctions are essential building blocks for electronic and optoelectronic devices,. In conventional p–n junctions, regions depleted of free charge carriers form on either side of the junction, generating built-in potentials associated with uncompensated dopant atoms. Carrier transport across the junction occurs by diffusion and drift processes influenced by the spatial extent of this depletion region. With the advent of atomically thin van der Waals materials and their heterostructures, it is now possible to realize ap–n …