Room temperature negative differential resistance of CdF2∕CaF2 double-barrier resonant tunneling diode structures grown on Si(100) substrates
作者： Tohru Kanazawa , Ryo Fujii , Takafumi Wada , Yusuke Suzuki , Masahiro Watanabe
DOI: 10.1063/1.2709508
关键词:
摘要: The authors have demonstrated the crystal growth of CaF2∕CdF2∕CaF2 multilayered heterostructures on Si(100) substrates as double-barrier resonant tunneling diode structures by a low-temperature technique. Current-voltage characteristics were investigated and observed negative differential resistance (NDR) at room temperature. peak-to-valley current ratio was 2–8, 13 maximum, peak density 80–90A∕cm2. quantum-well layer thickness dependence NDR voltages is also discussed basis qualitative analytical model using Esaki-Tsu formula.
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