Bulk damage in DMILL npn bipolar transistors caused by thermal neutrons versus protons and fast neutrons
作者： I. Mandic , V. Cindro , G. Kramberger , E.S. Kristof , M. Mikuz
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摘要: DMILL bipolar transistors (npn) were exposed to 24 GeV protons and fast thermal neutrons fluences up 6/spl middot/10/sup 14/ n/cm/sup 2/. Transistor common emitter current gain (/spl beta/=I/sub collector//I/sub base/) was measured after irradiations. It found that /spl beta/ degradation scales as Delta/(1//spl beta/)=k/sub T//spl middot//spl Phi//sub T/ where is the fluence of eq//spl eq/, with eq/ 1-MeV equivalent fluence, if are irradiated or neutrons. Large damage factor k/sub sim/3/spl middot/k/sub measured. Thermal do not have sufficient energy displace a Si atom. Their mechanism is, therefore, identified /sup 10/B(n,/spl alpha/)/sup 7/Li reaction from which energetic alpha/ Li particles produce bulk in base device. Boron used dopant these having also highly doped regions below contacts. Irradiations energies distributed show adds T/+k/sub eq/.
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