作者: M. Bayer , T. Baars , W. Braun , A. Forchel
DOI: 10.1007/978-1-4613-0203-2_8
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摘要: Low-dimensional semiconductor structures have attracted strong attention during the past two decades [1]. These developments were driven both by expectation of novel physical phenomena in these and their large application potential. While for quantum wells a detailed understanding electronic properties has already been obtained, wires dots there is still considerable lack knowledge.