Radiative recombination via intrinsic defects in CuxGaySe2
作者： A. Bauknecht , S. Siebentritt , J. Albert , M. Ch. Lux-Steiner
DOI: 10.1063/1.1357786
关键词:
摘要: A detailed analysis of the radiative recombination processes in CuxGaySe2 epitaxial layers is presented aiming at an investigation intrinsic defect levels as a function chemical composition. grown by metalorganic vapor phase epitaxy to allow precise control Temperature and excitation intensity dependent photoluminescence used identify different mechanisms determine ionization energies involved. Defect-correlated optical transitions Cu-rich epilayers are described model consisting two acceptor one donor showing (60±10) meV, (100±10) (12±5) respectively. The identification shallow compensating assignment 100 meV state most important new aspects this model. Photoluminescence properties Ga-rich compositions discussed highly doped compen...
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