Negative Differential Resistance on the Atomic Scale: Implications for Atomic Scale Devices
作者： I.-W. Lyo , P. Avouris
DOI: 10.1126/SCIENCE.245.4924.1369
关键词:
摘要: Negative differential resistance (NDR) is the essential property that allows fast switching in certain types of electronic devices. With scanning tunneling microscopy (STM) and spectroscopy, it shown current-voltage characteristics a diode configuration consisting an STM tip over specific sites boron-exposed silicon(111) surface exhibit NDR. These NDR-active are atomic dimensions (∼1 nanometer). NDR this case result through localized, atomic-like states. Thus, desirable device can be obtained even on scale.
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