Electrical properties of the SnO2-based varistor
作者： S. A PIANARO , P. R BUENO , P OLIVI , E LONGO , J.A VARELA
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摘要: The non-linear electrical properties of CoO-doped and Nb2O5-doped SnO2 ceramics were characterized. X-ray diffraction scanning electron microscopy indicated that the system is single phase. conduction mechanism for low applied field was associated with thermionic emission Schottky type. An atomic defect model based on double-barrier formation proposed to explain origin potential barrier at ceramic grain boundaries. These defects create depletion layers boundaries, favouring tunnelling high values field. © 1998 Chapman & Hall
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