Direct Determination of Optical Gain in Semiconductor Crystals
作者： K. L. Shaklee , R. F. Leheny
DOI: 10.1063/1.1653501
关键词:
摘要: … optical gain in the … in output intensity when only the length of the excited region is varied. This technique has the advantage that the crystal need not be fabricated into an optical cavity in …
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Douglas Magde, Herbert Mahr, Exciton-Exciton Interaction in CdS, CdSe, and ZnO Physical Review Letters. ,vol. 24, pp. 890- 893 ,(1970) , 10.1103/PHYSREVLETT.24.890
Claude Benoit à la Guillaume, Jean-Marie Debever, Frank Salvan, Radiative Recombination in Highly Excited CdS Physical Review. ,vol. 177, pp. 567- 580 ,(1969) , 10.1103/PHYSREV.177.567
W. T. Silfvast, J. S. Deech, Six dB/CM Single-Pass Gain at 7229 Å in Lead Vapor Applied Physics Letters. ,vol. 11, pp. 97- 99 ,(1967) , 10.1063/1.1755052
C. V. Shank, A. Dienes, W. T. Silfvast, SINGLE PASS GAIN OF EXCIPLEX 4‐MU AND RHODAMINE 6G DYE LASER AMPLIFIERS Applied Physics Letters. ,vol. 17, pp. 307- 309 ,(1970) , 10.1063/1.1653413
R. F. Leheny, K. L. Shaklee, E. P. Ippen, R. E. Nahory, J. L. Shay, A NEW MODEL FOR THE TEMPERATURE‐DEPENDENT CdS LASER Applied Physics Letters. ,vol. 17, pp. 494- 497 ,(1970) , 10.1063/1.1653282
C. H. Gooch, Gallium arsenide lasers Wiley-Interscience. ,(1969)