The influence of growth conditions on the quality of CdZnTe single crystals

摘要: Experimental conditions were investigated for growth of inclusion-free near-stoichiometric CdZnTe single crystals with a minimized concentration native point defects. The positions the stoichiometric line PS = 8×105exp (-1.76×104/T) (atm) and room-temperature high-temperature p-n lines evaluated from in situ galvanomagnetic measurements. Cd pressure at congruent melting was estimated ~1.15-1.20 atm analysis total inclusion volume five fabricated pressures range 1-1.3 atm. An crystal prepared PCd~1.2 atm. Calculations based on model two major defects, vacancy interstitial, show that very small deviation PCd results large generation Thus reproducible production high-resistivity material by slow cooling along seems to be difficult.