Identification of ultradilute dopants in ceramics.
作者： Isao Tanaka , Teruyasu Mizoguchi , Masafumi Matsui , Satoru Yoshioka , Hirohiko Adachi
DOI: 10.1038/NMAT939
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摘要: The properties of ceramic materials are strongly influenced by the presence ultradilute impurities (dopants). Near-edge X-ray absorption fine structure (NEXAFS) measurements using third-generation synchotron sources can be used to identify dopants, provided that a good theoretical tool is available interpret spectra. Here, we use NEXAFS analysis and first-principles calculations study local environments Ga dopants at levels 10 p.p.m in otherwise high-purity MgO. This suggests extra charge associated with substitutional on Mg site compensated formation vacancy. defect model then confirmed positron lifetime plane-wave pseudopotential calculations. powerful combination techniques should provide general method identifying states ceramics.
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