Refined Model for the Optimal Metal Content in Semiconductor Photocatalysts

摘要: Doping with metal ions is a simple and convenient method of improving the photocatalytic activity semiconducting materials. As revealed previously (Bloh et al. J. Phys. Chem. C 2012, 116, 25558−25562), optimal doping ratio strongly dependent on particle size can be predicted an empirical function. This work expands that model, providing more accurate physical explanation observed behavior. The new model based theory only fraction dopants situated surface has beneficial effect. Analysis almost 200 data points from literature corresponds well to equivalent 3.54 dopant atoms per particle, apparently independent other parameters such as material or dopant. With this knowledge, for given catalyst good precision. findings also suggest grafting essentially cause same effect, latter while avoid...