作者: Jonathan D. Posner , Shuhuai Yao , Alan M. Myers , Klint A. Rose , Juan G. Santiago
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摘要: N-type porous silicon can be used to realize electroos- motic pumps with high flow rates per applied potential difference. The porosity and pore size of membranes tuned, the geometry has near-unity tortuosity, mem- branes made thin integrated support structures. hexagonally packed pores is modified by low-pressure chemical vapor deposition (LPCVD) polysilicon deposition, fol- lowed wet oxidation layer, resulting in a radius varying from 1 3 m. Pumping performance these devices experimentally studied as function compared theory. These 350- m-thick ex- hibit maximum rate field 0.13 ml/min/cm /V. This figure merit five times larger than previously demon- strated glass EO pumps. (1494)