Effective control of the charge and magnetic states of transition-metal atoms on single-layer boron nitride.

摘要: Developing approaches to effectively control the charge and magnetic states is critical use of nanostructures in quantum information devices but still challenging. Here we suggest that transition-metal (TM) doped single-layer boron-nitride (SLBN) systems can be easily controlled by (internal) defect engineering (external) electric fields (${E}_{\mathrm{ext}}$). The relative positions symmetries in-gap levels induced TM $d$-orbital energy determine properties TM/SLBN system. Remarkably, application an ${E}_{\mathrm{ext}}$ size crystal field splitting $d$ orbitals thus, leading spin crossover TM/SLBN, which could used as ${E}_{\mathrm{ext}}$-driven nonvolatile memory devices. Our conclusion obtained from valid generally other adsorbed layered semiconductors.