2-stack 1D-1R Cross-point Structure with Oxide Diodes as Switch Elements for High Density Resistance RAM Applications
作者： Myoung-Jae Lee , Youngsoo Park , Bo-Soo Kang , Seung-Eon Ahn , Changbum Lee
DOI: 10.1109/IEDM.2007.4419061
关键词:
摘要: … Bi-stable switching for 1D-1R chosen a Ti-doped NiO resistor which shows reversible and memory was demonstrated for our 2-stack cross-point non-volatile switching behaviors …
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