Hole accumulation effect on Laser-assisted field evaporation of insulators.
作者： Yu Xia
DOI: 10.1016/J.ULTRAMIC.2018.10.004
关键词:
摘要: Abstract Current issues associated with laser-assisted atom probe tomography of insulators are addressed by investigating laser-induced carrier dynamics and field evaporation kinetics. It is shown that for typical slow recombination compared to the sub-picosecond laser pulse, hole accumulation at surface plays a key role. By carrying out density functional theory calculations on MgO cluster, it found critical strength decreases linearly as increases. This phenomenon can be explained hole-induced electric field. The neutral oxygen enhanced low electrostatic high intensity. Theoretical insight also provided non-stoichiometry problem in mass spectra measured compounds.
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