SnO/sub 2//Pt microsensors fabricated on micromachined Si (100) substrate suitable for silicon processing
作者： B. Esfandyarpour , S. Mohajerzadch , B. Hekmatshoar , M. Moradi , A. Khodadadi
DOI: 10.1109/ICSENS.2003.1278917
关键词:
摘要: Using standard photolithography process, thin film SnO/sub 2/-based gas sensors were fabricated on Si/sub 3/N/sub 4/ membrane for detection of CO and H/sub 2/. The sensing material with a thickness 400nm was spin-coated using sol-gel deposition technique. Platinum added by various thicknesses Pt an RF sputtering unit onto the films after preannealing process. 2% chemically doped prepared adding appropriate amount 2/Cl/sub 6/Pt.6H/sub 2/O to solution. Conductivity measurements annealed at different temperatures have been carried out in dry air presence concentrations Pt-doped sensor method sputter-deposited platinum 2/ surface exhibited high sensitivity selective However, showed considerable response temperature around 170/spl deg/C. selectivity studied toward reducing gases. SEM XRD analyses used investigate morphology crystallinity annealing temperatures.
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