作者: Kin Leong Pey , Jia Hao Lim , Nagarajan Raghavan , Sen Mei , Jae Hyun Kwon
DOI: 10.1109/EDTM.2019.8731071
关键词:
摘要: In a comprehensive analytical study of dielectric breakdown (BD) of ultra-thin MgO in 28 nm embedded MRAM (eMRAM) test chips, it was observed that breakdown in MgO is polarity …