作者: Sunita Rani , Devendra Mohan , Manish Kumar , None
DOI: 10.1016/J.OPTMAT.2018.03.046
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摘要: Abstract Third order nonlinear susceptibility of (GeSe3.5)100-xBix (x = 0, 10, 14) and ZnxSySe100-x-y (x = 2, y = 28; x = 4, y = 20; x = 6, y = 12; x = 8, y = 4) amorphous chalcogenide thin films prepared using thermal evaporation technique is estimated. The dielectric constant at incident third harmonic wavelength calculated “PARAV” computer program. 1064 nm Nd: YAG laser on film signal 355 nm alongwith fundamental light obtained in reflection that separated from suitable optical filter. Reflected measured to trace the influence Bi Zn found increase with content (GeSe3.5)100-xBix, respectively. excellent property shows use photonics for conversion data processing.